The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2025
Filed:
Oct. 28, 2021
Renesas Electronics Corporation, Tokyo, JP;
Yoshiyuki Kawashima, Tokyo, JP;
Masao Inoue, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
A memory cell which is a non-volatile memory cell includes a gate insulating film having a charge storage layer capable of retaining charge and a memory gate electrode formed on the gate insulating film. The charge storage layer includes a first insulating film containing hafnium and silicon and a second insulating film formed on the first insulating film and containing hafnium and silicon. Here, a hafnium concentration of the first insulating film is lower than a hafnium concentration of the second insulating film, and a bandgap of the first insulating film is larger than a bandgap of the second insulating film.