The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2021
Filed:
Feb. 26, 2018
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventors:
Masaru Kadoshima, Tokyo, JP;
Masao Inoue, Tokyo, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 29/423 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 27/11568 (2017.01); H01L 21/02 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7923 (2013.01); H01L 21/022 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01); H01L 21/02238 (2013.01); H01L 21/02255 (2013.01); H01L 21/02271 (2013.01); H01L 21/02323 (2013.01); H01L 21/02326 (2013.01); H01L 21/02343 (2013.01); H01L 27/11568 (2013.01); H01L 29/40117 (2019.08); H01L 29/4234 (2013.01); H01L 29/66833 (2013.01); H01L 29/513 (2013.01);
Abstract
To improve the performance of a semiconductor device, the semiconductor device includes an insulating film portion over a semiconductor substrate. The insulating film portion includes an insulating film containing silicon and oxygen, a first charge storage film containing silicon and nitrogen, an insulating film containing silicon and oxygen, a second charge storage film containing silicon and nitrogen, and an insulating film containing silicon and oxygen. The first charge storage film is included by two charge storage films.