logo

For the Inventor, By the Inventor

Beacon, NY, United States of America

Lijuan Zhang

This inventor holds 24 USPTO granted patents and 1 published patent application, primarily in Semiconductor Packaging. Top assignees: International Business Machines Corporation, Globalfoundries Inc., Marvell Asia Pte., Ltd.. Active years: 2014-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Lijuan Zhang. Retrieved from https://idiyas.com/inventor/lijuan-zhang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 24 

% Patents Active = 62.5

Average Co-Inventor Count = 4.4

ph-index = 5

Forward Citations = 64(Granted Patents)


Location History:

  • Beacon, NY (US) (2014 - 2020)
  • Fremont, CA (US) (2015 - 2020)

Company Filing History:

goldMedal17 out of 166,325 
 
International Business Machines Corporation
 patents
silverMedal4 out of 5,671 
 
Globalfoundries Inc.
 patents
bronzeMedal2 out of 1,233 
 
Marvell Asia Pte., Ltd.
 patents
4. 1 out of 1,901 
 
Marvellworld Trade Ltd.
 patents

Years Active: 2014-2025

Loading Chart...
Areas of Expertise:
Electromigration Monitor
Chiplet Connection
High Density Interconnect
TSV Deep Trench Capacitor
Programmable Electrical Fuse
Metal Cap Layer Formation
Integrated Circuit Structure
E-Fuse Hybrid Metallization
Guard Ring Structure
Interconnect Metallization
TDDB Reliability
C4 Pad
24 patents (USPTO):Explore Patents
1. 12362293 - Double seal ring and electrical connection of multiple chiplets (2025-07-15),
2. 10794948 - Electromigration monitor (2020-10-06),
3. 10734334 - Coaxial-interconnect structure for a semiconductor component (2020-08-04),
4. 10677833 - Electromigration monitor (2020-06-09),
5. 10438881 - Packaging arrangements including high density interconnect bridge (2019-10-08),
6. 9891261 - Electromigration monitor (2018-02-13),
7. 9741657 - TSV deep trench capacitor and anti-fuse structure (2017-08-22),
8. 9536829 - Programmable electrical fuse in keep out zone (2017-01-03),
9. 9536779 - Selective local metal cap layer formation for improved electromigration behavior (2017-01-03),
10. 9524916 - Structures and methods for determining TDDB reliability at reduced spacings using the structures (2016-12-20),
11. 9478509 - Mechanically anchored backside C4 pad (2016-10-25),
12. 9431293 - Selective local metal cap layer formation for improved electromigration behavior (2016-08-30),
13. 9318414 - Integrated circuit structure with through-semiconductor via (2016-04-19),
14. 9318413 - Integrated circuit structure with metal cap and methods of fabrication (2016-04-19),
15. 9305879 - E-fuse with hybrid metallization (2016-04-05),

Title: Inventor Spotlight: Lijuan Zhang from Beacon, NY

Introduction: Lijuan Zhang, a prolific inventor based in Beacon, NY, has made significant contributions to the field of semiconductor technology with a total of 23 patents to his name. His innovative spirit and dedication have led to groundbreaking advancements in the industry.

Latest Patents: Among his latest patents is the "Electromigration monitor," a method for testing electrical current through EM monitor wiring, and the "Coaxial-interconnect structure for a semiconductor component," which integrates a coaxial interconnect structure into a semiconductor component. These inventions showcase Zhang's expertise and vision in enhancing semiconductor technologies.

Career Highlights: Lijuan Zhang has honed his skills and expertise while working at esteemed companies such as IBM and Globalfoundries Inc. His experience at these industry giants has provided him with a solid foundation to drive innovation and push the boundaries of technological advancements.

Collaborations: Throughout his career, Zhang has collaborated with industry peers such as Ping-Chuan Wang and Ronald G. Filippi. These collaborations have not only enriched his own work but have also fostered a culture of teamwork and knowledge-sharing within the semiconductor community.

Conclusion: Lijuan Zhang's journey as an inventor exemplifies the power of innovation and perseverance in shaping the future of technology. His patents and contributions stand as a testament to his ingenuity and passion for pushing the boundaries of what is possible in the world of semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…