The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2020

Filed:

Nov. 07, 2017
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Fen Chen, Williston, VT (US);

Mukta G. Farooq, Hopewell Junction, VT (US);

John A. Griesemer, Salt Point, NY (US);

Chandrasekaran Kothandaraman, Hopewell Junction, NY (US);

John M. Safran, Wappingers Falls, NY (US);

Timothy D. Sullivan, Underhill, VT (US);

Ping-Chuan Wang, Hopewell Junction, NY (US);

Lijuan Zhang, Beacon, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); G01R 31/08 (2020.01); H01L 23/48 (2006.01); G01R 31/28 (2006.01);
U.S. Cl.
CPC ...
G01R 31/08 (2013.01); G01R 31/2858 (2013.01); H01L 22/34 (2013.01); H01L 23/481 (2013.01); G01R 31/2856 (2013.01); H01L 22/14 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A structure, such as a wafer, semiconductor chip, integrated circuit, or the like, includes a through silicon via (TSV) and an electromigration (EM) monitor. The TSV) includes at least one perimeter sidewall. The EM monitor includes a first EM wire separated from the perimeter sidewall of the TSV by a dielectric.


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