The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2016
Filed:
Oct. 29, 2013
Globalfoundries Inc., Grand Cayman, KY;
Fen Chen, Williston, VT (US);
Minhua Lu, Mohegan Lake, NY (US);
Timothy D. Sullivan, Underhill, VT (US);
Ping-Chuan Wang, Hopewell Junction, NY (US);
Lijuan Zhang, Beacon, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
The present disclosure generally provides for integrated circuit (IC) structures with through-semiconductor vias (TSV). In an embodiment, an IC structure may include a through-semiconductor via (TSV) embedded in a substrate, the TSV having a cap; a dielectric layer adjacent to the substrate; a metal layer adjacent to the dielectric layer; a plurality of vias each embedded within the dielectric layer and coupling the metal layer to the cap of the TSV at respective contact points, wherein the plurality of vias is configured to create a substantially uniform current density throughout the TSV.