The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2016

Filed:

Oct. 29, 2013
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Fen Chen, Williston, VT (US);

Andrew T. Kim, Poughkeepsie, NY (US);

Minhua Lu, Mohegan Lake, NY (US);

Timothy D. Sullivan, Underhill, VT (US);

Ping-Chuan Wang, Hopewell Junction, NY (US);

Lijuan Zhang, Beacon, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/76898 (2013.01); H01L 21/76849 (2013.01); H01L 23/5226 (2013.01); H01L 2924/0002 (2013.01);
Abstract

The present disclosure generally provides for an integrated circuit (IC) structure with a TSV, and methods of manufacturing the IC structure and the TSV. An IC structure according to embodiments of the present invention may include a through-semiconductor via (TSV) embedded within a substrate, the TSV having an axial end; and a metal cap contacting the axial end of the TSV, wherein the metal cap has a greater electrical resistivity than the TSV.


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