Company Filing History:
23 out of 7,074 
3 out of 1,016 Years Active: 2015-2025
Title: Innovations and Contributions of Liang Yi in Semiconductor Technology
Introduction
Liang Yi, a renowned inventor located in Singapore, has made significant strides in the field of semiconductor technology. With an impressive portfolio of 25 patents, Liang's work has been pivotal in advancing memory device structures and fabrication methods.
Latest Patents
Among his latest innovations are patents for the structure of a memory device featuring a floating gate with a protruding structure. This memory device includes an active region in a substrate, a dielectric layer on the active region, and a meticulously designed floating gate that integrates a first protruding structure extending along the active region. Additionally, he has developed a method for forming a semiconductor memory device that incorporates a T-shaped erase gate. This method outlines a process where two floating gates are placed on either side of a source diffusion region in a substrate, allowing for enhanced memory performance and device reliability.
Career Highlights
Throughout his career, Liang Yi has worked with reputable companies in the semiconductor industry, including United Microelectronics Corporation and Globalfoundries Singapore Pte. Ltd. His expertise and innovative mindset have contributed to numerous developments in semiconductor fabrication processes, underscoring his role as a leader in this highly competitive field.
Collaborations
Liang has collaborated with other notable inventors, including Chi Ren and Shen-De Wang. These partnerships have fostered creativity and innovation, leading to advancements that benefit the broader technology community.
Conclusion
Liang Yi's dedication to innovation in semiconductor technology and his prolific patent portfolio highlight his significant contributions to the industry. As technology continues to evolve, the impact of his inventions will likely be felt for years to come, paving the way for future advancements in memory devices and semiconductor applications.
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