The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
Aug. 04, 2023
Applicant:
United Microelectronics Corp., Hsinchu, TW;
Inventors:
Liang Yi, Singapore, SG;
Zhiguo Li, Singapore, SG;
Chi Ren, Singapore, SG;
Qiuji Zhao, Singapore, SG;
Boon Keat Toh, Singapore, SG;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 41/30 (2023.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
H10B 41/30 (2023.02); H01L 29/42328 (2013.01); H01L 29/513 (2013.01); H01L 29/518 (2013.01); H01L 29/788 (2013.01);
Abstract
A structure of memory device includes an active region in a substrate, a dielectric layer on the active region, and a floating gate disposed on the dielectric layer. The active region extends along a first direction in a top-view. The floating gate includes a first protruding structure extending along the first direction from a sidewall of the floating gate protruding from a top surface of the substrate. The whole of the first protruding structure is located in the active region.