The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2024

Filed:

Jun. 09, 2022
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Liang Yi, Singapore, SG;

Chi Ren, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42328 (2013.01); H01L 29/40114 (2019.08); H01L 29/66825 (2013.01); H01L 29/7883 (2013.01);
Abstract

A semiconductor memory device includes a substrate, a pair of floating gates disposed on the substrate, a source line doped region in the substrate between the floating gates, an erase gate disposed between the floating gates and on the source line doped region, a word line disposed on the substrate and adjacent to a side of each of the floating gates opposite to the erase gate, and a bit line doped region in the substrate and adjacent to the word line. An upper surface of the source line doped region has a concave profile lower than a surface of the substrate and with a radius between 40 nm and 60 nm in a cross-sectional view perpendicular to the floating gates.


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