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Uijeongbu-si, South Korea

Kyung-Eun Byun

USPTO Granted Patents = 55 (Patent Applications = 48)

EPO Patents = 9 (Patent Applications = 23)

Average Co-Inventor Count = 6.4

ph-index = 4

Forward Citations = 70(Granted Patents)

Forward Citations (Not Self Cited) = 51(Dec 10, 2025)

Location History:

Uijeongbu-si, KR (2015 - 2018)
Suwon-si, KR (2022)
Seongnam-si, KR (2019 - 2024)

Company Filing History:

55 out of 131,611

Samsung Electronics Co., Ltd.

Sungkyunkwan University

Seoul National University

4. 2 out of 300

Ulsan National Institute of Science and Technology

Research & Business Foundation Sungyunkwan University

where one patent can have more than one assignee

Years Active: 2015-2025

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Areas of Expertise:

Nanocrystalline Graphene

Graphene Layer

Vertical Channel Transistor

Interconnect Structure

Two-Dimensional Material

Metal Chalcogenide Film

Semiconductor Memory Device

Transition Metal Dichalcogenide

Graphene Device

Triboelectric Generator

Pressure Sensor

Electronic Device

55 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12506074 - Interconnect structure to reduce contact resistance, electronic device including the same, and method of manufacturing the interconnect structure (2025-12-23),

2. 12421598 - Nanocrystalline graphene and method of forming nanocrystalline graphene (2025-09-23),

3. 12400975 - Interconnect structure and electronic device including the same (2025-08-26),

4. 12389630 - Vertical channel transistor including a graphene insertion layer beweeen a source/drain electrode and a channel pattern (2025-08-12),

5. 12378120 - Wiring including graphene layer and method of manufacturing the same (2025-08-05),

6. 12369359 - Thin film structure and electronic device including two-dimensional material (2025-07-22),

7. 12359911 - Method of calculating thickness of graphene layer and method of measuring content of silicon carbide by using XPS (2025-07-15),

8. 12341063 - Interconnect structure, electronic device including the same, and method of manufacturing interconnect structure (2025-06-24),

9. 12336259 - Electronic device including two-dimensional material and method of fabricating the same (2025-06-17),

10. 12334357 - Method of forming material layer (2025-06-17),

11. 12297532 - Metal chalcogenide film and method and device for manufacturing the same (2025-05-13),

12. 12262527 - Vertical-channel cell array transistor structure and dram device including the same (2025-03-25),

13. 12217958 - Method of pre-treating substrate and method of directly forming graphene using the same (2025-02-04),

14. 12183783 - Stacked structure including two-dimensional material and method of fabricating the stacked structure (2024-12-31),

15. 12183780 - Metal-to-semiconductor contact including a 2D crystal material layer (2024-12-31),

Title: The Innovative Contributions of Kyung-Eun Byun

Introduction: Kyung-Eun Byun is a notable inventor based in Uijeongbu-si, South Korea. With an impressive portfolio of 43 patents, Byun has made significant advancements in the field of material science and nanotechnology, particularly focusing on graphene and two-dimensional materials.

Latest Patents: Among his most recent innovations are two groundbreaking patents. The first is a "Method of pre-treating substrate and method of directly forming graphene using the same." This innovative method involves the pre-treatment of a substrate using a gas that contains both a carbon source and hydrogen, which facilitates the direct formation of graphene. The second patent, titled "Stacked structure including two-dimensional material and method of fabricating the stacked structure," describes a sophisticated design wherein a stacked structure comprises a first material layer, a two-dimensional material layer, and a second material layer. The two-dimensional layer features multiple holes that reveal portions of the first material layer, enhancing the structural integrity and functionality of the assembly.

Career Highlights: Kyung-Eun Byun has had a distinguished career, having worked with leading organizations such as Samsung Electronics Co., Ltd. and the Research & Business Foundation at Sungkyunkwan University. His contributions to these institutions have paved the way for advancements in technology and innovation, further establishing his reputation as a leading figure in his area of expertise.

Collaborations: Throughout his career, Byun has collaborated with talented individuals, including Hyeonjin Shin and Keunwook Shin. These partnerships have fostered a creative environment, allowing for the exchange of ideas and techniques that have led to numerous successful patents.

Conclusion: Kyung-Eun Byun's innovations reflect a commitment to advancing technology through intelligent design and effective application of scientific principles. His contributions to the field of graphene and two-dimensional materials continue to inspire future researchers and inventors.

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