The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
May. 22, 2023
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Joungeun Yoo, Suwon-si, KR;
Changhyun Kim, Suwon-si, KR;
Kyung-Eun Byun, Suwon-si, KR;
Minsu Seol, Suwon-si, KR;
Keunwook Shin, Suwon-si, KR;
Eunkyu Lee, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 48/36 (2025.01); H10D 62/80 (2025.01);
U.S. Cl.
CPC ...
H10D 48/362 (2025.01); H10D 62/80 (2025.01);
Abstract
A semiconductor device may include a channel layer including a two-dimensional (2D) semiconductor material, a gate insulating layer on a center portion of the channel layer, a gate electrode on the gate insulating layer, and a first conductive layer and a second conductive layer respectively contacting opposite sides of the channel layer. Each of the first and second conductive layers may include metal boride.