The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2026
Filed:
Jan. 23, 2023
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Sangwook Kim, Suwon-si, KR;
Kyung-Eun Byun, Suwon-si, KR;
Keunwook Shin, Suwon-si, KR;
Moonil Jung, Suwon-si, KR;
Euntae Kim, Suwon-si, KR;
Jeeeun Yang, Suwon-si, KR;
Kwanghee Lee, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10D 62/80 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6755 (2025.01); H10D 30/6729 (2025.01); H10D 62/882 (2025.01);
Abstract
A transistor includes an oxide semiconductor layer, a source electrode and a drain electrode disposed spaced apart from each other on the oxide semiconductor layer, a gate electrode spaced apart from the oxide semiconductor layer, a gate insulating layer disposed between the oxide semiconductor layer and the gate electrode, and a graphene layer disposed between the gate electrode and the gate insulating layer and doped with a metal.