The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2026
Filed:
Jan. 11, 2023
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Duseop Yoon, Suwon-si, KR;
Junyoung Kwon, Suwon-si, KR;
Minsu Seol, Suwon-si, KR;
Minseok Yoo, Suwon-si, KR;
Kyung-Eun Byun, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10B 12/00 (2023.01); H10B 53/30 (2023.01); H10B 61/00 (2023.01); H10B 63/00 (2023.01); H10D 62/80 (2025.01); H10D 64/01 (2025.01); H10D 64/62 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6729 (2025.01); H10D 64/01 (2025.01); H10D 64/62 (2025.01); H10B 12/31 (2023.02); H10B 53/30 (2023.02); H10B 61/22 (2023.02); H10B 63/30 (2023.02); H10D 62/80 (2025.01);
Abstract
A semiconductor device may include a two-dimensional material layer, one or more metal islands on the two-dimensional material layer, and a metal layer covering the metal islands on the two-dimensional material layer. The semiconductor device may be manufactured by a method including forming metal islands on a two-dimensional material layer using a redox method and forming a metal layer covering the metal islands on the two-dimensional material layer.