The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2026

Filed:

Nov. 20, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Minsu Seol, Suwon-si, KR;

Jeeeun Yang, Suwon-si, KR;

Sangwook Kim, Suwon-si, KR;

Kyung-Eun Byun, Suwon-si, KR;

Eunkyu Lee, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H10D 48/36 (2025.01); H10D 62/80 (2025.01); H10D 64/27 (2025.01); H10D 99/00 (2025.01); H10P 14/20 (2026.01);
U.S. Cl.
CPC ...
H10D 48/362 (2025.01); H10D 62/80 (2025.01); H10D 64/513 (2025.01); H10D 99/00 (2025.01); H10P 14/3436 (2026.01);
Abstract

Disclosed are a semiconductor device, a method of manufacturing the same, and an electronic element and an electronic apparatus each including the semiconductor device. The semiconductor device may include a substrate, a channel layer on the substrate, a first electrode and a second electrode on two opposite ends of the channel layer, respectively, and spaced apart from each other, a gate electrode on the channel layer and spaced apart from the first electrode and the second electrode, a gate dielectric material provided between the channel layer and the gate electrode, and a chalcogen compound layer being at least one of between the gate dielectric material and the channel layer, between the first electrode and the channel layer, and between the second electrode and the channel layer.


Find Patent Forward Citations

Seol, Minsu. (2026). Semiconductor device and method of manufacturing the same (U.S. Patent No. 12765005). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12765005

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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