The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2026

Filed:

Jan. 16, 2023
Applicants:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Research & Business Foundation Sungkyunkwan University, Suwon-si, KR;

Inventors:

Junyoung Kwon, Suwon-si, KR;

Sangwoo Kim, Yongin-si, KR;

Kyung-Eun Byun, Suwon-si, KR;

Minsu Seol, Suwon-si, KR;

Minseok Shin, Suwon-si, KR;

Pin Zhao, Suwon-si, KR;

Taehyeong Kim, Suwon-si, KR;

Jaehwan Jung, Suwon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/84 (2025.01); H10D 99/00 (2025.01);
U.S. Cl.
CPC ...
H10D 62/84 (2025.01); H10D 99/00 (2025.01);
Abstract

A semiconductor device including a two-dimensional material and a method of manufacturing the same are provided. The semiconductor device may include a first two-dimensional material layer including a first two-dimensional semiconductor material; a plurality of second two-dimensional material layers connected to the first two-dimensional material layer, each having a thickness greater than that of the first two-dimensional material layer, and including a doped two-dimensional semiconductor material; and a plurality of electrodes on the plurality of second two-dimensional material layers.


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