The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2026
Filed:
Nov. 14, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Keunwook Shin, Yongin-si, KR;
Changhyun Kim, Seoul, KR;
Sehun Park, Suwon-si, KR;
Hyunwoo Kim, Seoul, KR;
Kyung-Eun Byun, Seongnam-si, KR;
Dongjin Yun, Pohang-si, KR;
Changseok Lee, Gwacheon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A vertical nonvolatile memory device may include a channel layer extending in a first direction; a plurality of gate electrodes and a plurality of spacers each extending in a second direction crossing the first direction, the plurality of gate electrodes and the plurality of spacers being alternately arranged with each other in the first direction; and a gate insulating layer extending in the first direction between the channel layer and the plurality of gate electrodes. Each of the plurality of gate electrodes may include a metal-doped graphene.