The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
Mar. 17, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Kyung-Eun Byun, Seongnam-si, KR;
Sangwon Kim, Seoul, KR;
Changhyun Kim, Seoul, KR;
Keunwook Shin, Yongin-si, KR;
Changseok Lee, Gwacheon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A vertical channel transistor includes a first source/drain electrode; a second source/drain electrode spaced apart from the first source/drain electrode in a first direction; a first channel pattern between the first source/drain electrode and the second source/drain electrode; a first gate electrode on a side surface of the first channel pattern; a first gate insulation layer between the first channel pattern and the first gate electrode; and a first graphene insertion layer between the first source/drain electrode and the first channel pattern.