The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Apr. 01, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Sangwon Kim, Seoul, KR;
Kyung-Eun Byun, Seongnam-si, KR;
Yeonchoo Cho, Seongnam-si, KR;
Keunwook Shin, Yongin-si, KR;
Eunkyu Lee, Yongin-si, KR;
Changseok Lee, Gwacheon-si, KR;
Hyunjae Song, Hwaseong-si, KR;
Hyeonjin Shin, Suwon-si, KR;
Jungsoo Yoon, Hwaseong-si, KR;
Soyoung Lee, Yongin-si, KR;
Hyunseok Lim, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided are nanocrystalline graphene and a method of forming the same. The nanocrystalline graphene may include a plurality of grains formed by stacking a plurality of graphene sheets and has a grain density of about 500 ea/μmor higher and a root-mean-square (RMS) roughness in a range of about 0.1 or more to about 1.0 or less. When the nanocrystalline graphene has a grain density and a RMS roughness with these ranges, nanocrystalline graphene capable of covering the entirety of a large area on a substrate as a thin layer may be provided.