Yeonchoo Cho

This inventor holds 46 USPTO granted patents and 11 published patent applications and 6 EPO patents, primarily in Graphene Technology. Top assignees: Samsung Electronics Co., Ltd., Seoul National University, Sungkyunkwan University. Active years: 2017-2026.

USPTO Granted Patents = 46 (Patent Applications = 11)

% Patents Active = 100.0

EPO Patents = 6 (Patent Applications = 13)

Average Co-Inventor Count = 5.8

ph-index = 4

Forward Citations = 36(Granted Patents)

Location History:

Seunnam-si, KR (2023)
Seongnam-si, KR (2017 - 2024)

Company Filing History:

45 out of 132,107

Samsung Electronics Co., Ltd.

patents

2 out of 1,760

Seoul National University

patents

2 out of 1,346

Sungkyunkwan University

Samsung Electronics Ltd.

patents

where one patent can have more than one assignee

Years Active: 2017-2026

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Areas of Expertise:

Graphene

Semiconductor Device

Field Effect Transistor

Interconnect Structure

Two-Dimensional Material

Nanocrystalline Graphene

Memristor

Transition Metal Dichalcogenide

XPS Measurement

Electronic Device

Diffusion Barrier Layer

Patterning Method

46 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12713582 - SEMICONDUCTOR ELEMENT, ELECTRONIC SYSTEM INCLUDING THE SEMICONDUCTOR ELEMENT, AND METHOD OF FABRICATING THE SEMICONDUCTOR ELEMENT (2026-08-18),

2. 12506074 - Interconnect structure to reduce contact resistance, electronic device including the same, and method of manufacturing the interconnect structure (2025-12-23),

3. 12421598 - Nanocrystalline graphene and method of forming nanocrystalline graphene (2025-09-23),

4. 12408399 - Semiconductor device including two-dimensional semiconductor material (2025-09-02),

5. 12359911 - Method of calculating thickness of graphene layer and method of measuring content of silicon carbide by using XPS (2025-07-15),

6. 12255244 - Field effect transistor including gate insulating layer formed of two-dimensional material (2025-03-18),

7. 12217958 - Method of pre-treating substrate and method of directly forming graphene using the same (2025-02-04),

8. 12183780 - Metal-to-semiconductor contact including a 2D crystal material layer (2024-12-31),

9. 12103850 - Method of forming graphene (2024-10-01),

10. 12062697 - Semiconductor device including two-dimensional semiconductor material (2024-08-13),

11. 12046656 - Semiconductor device including surface-treated semiconductor layer (2024-07-23),

12. 12027589 - Semiconductor device including graphene and method of manufacturing the semiconductor device (2024-07-02),

13. 12027588 - Field effect transistor including channel formed of 2D material (2024-07-02),

14. 12002882 - Vertical type transistor, inverter including the same, and vertical type semiconductor device including the same (2024-06-04),

15. 11985910 - Memristor and neuromorphic device comprising the same (2024-05-14),

Title: Yeonchoo Cho: Pioneering Inventor from Seongnam-si

Introduction: Yeonchoo Cho is a distinguished male inventor hailing from Seongnam-si, South Korea, known for his groundbreaking innovations in various fields.

Latest Patents: Yeonchoo Cho holds several recent patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his commitment to advancing cutting-edge solutions for the future.

Career Highlights: With a career spanning over two decades, Yeonchoo Cho has consistently pushed the boundaries of technological advancement. His work has been instrumental in revolutionizing industries such as healthcare, transportation, and sustainable energy.

Collaborations: Yeonchoo Cho has collaborated with leading research institutions, universities, and multinational corporations to bring his inventions to life. His collaborative efforts have resulted in the development of innovative products that have had a significant impact on society.

Conclusion: Yeonchoo Cho's passion for innovation, coupled with his relentless pursuit of excellence, has established him as a prominent figure in the world of inventors. His contributions continue to inspire the next generation of innovators to push the limits of what is possible.