The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
Sep. 02, 2021
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Yeonchoo Cho, Seongnam-si, KR;
Kyung-Eun Byun, Seongnam-si, KR;
Keunwook Shin, Yongin-si, KR;
Hyeonjin Shin, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 23/522 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/04 (2013.01); H01L 23/5228 (2013.01); H01L 29/1606 (2013.01); H01L 29/1608 (2013.01); H01L 29/161 (2013.01); H01L 29/4925 (2013.01); H01L 29/7839 (2013.01);
Abstract
A semiconductor device is provided. The semiconductor device includes a metal layer, a semiconductor layer in electrical contact with the metal layer, a two-dimensional (2D) material layer disposed between the metal layer and the semiconductor layer and having a 2D crystal structure, and a metal compound layer disposed between the 2D material layer and the semiconductor layer.