The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2024
Filed:
Jun. 09, 2022
Applicants:
Samsung Electronics Co., Ltd., Suwon-si, KR;
President and Fellows of Harvard College, Cambridge, MA (US);
Inventors:
Minhyun Lee, Suwon-si, KR;
Dovran Amanov, Cambridge, MA (US);
Renjing Xu, Cambridge, MA (US);
Houk Jang, Cambridge, MA (US);
Haeryong Kim, Seongnam-si, KR;
Hyeonjin Shin, Suwon-si, KR;
Yeonchoo Cho, Seongnam-si, KR;
Donhee Ham, Cambridge, MA (US);
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/826 (2023.02); H10B 63/80 (2023.02); H10N 70/24 (2023.02); H10N 70/8416 (2023.02);
Abstract
Provided are memristors and neuromorphic devices including the memristors. A memristor includes a lower electrode and an upper electrode that are apart from each other and first and second two-dimensional material layers that are arranged between the lower electrode and the upper electrode and stacked without a chemical bond therebetween.