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Ku-Feng Yang

USPTO Granted Patents = 83 (Patent Applications = 28)

Average Co-Inventor Count = 4.6

ph-index = 9

Forward Citations = 1,461(Granted Patents)

Forward Citations (Not Self Cited) = 1,436(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Taichung, TW (2011)
Dali, TW (2010 - 2017)
Hsinchu County, TW (2017 - 2023)
Baoshan Township, TW (2015 - 2024)

Company Filing History:

83 out of 40,848

Taiwan Semiconductor Manufacturing Comp. Ltd.

Years Active: 2010-2025

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Areas of Expertise:

Semiconductor Devices

Through-Substrate Vias

Interconnect Structures

TSV Formation

3D Integrated Circuits

Plating Apparatus

Wafer Pre-Wetting

Dummy Structures

Isolation Bonding Films

Backside Interconnects

Heterogeneous Dielectric Bonding

Redistribution Layers

83 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12484253 - Metal features of a semiconductor device and methods for forming the same (2025-11-25),

2. 12366004 - Apparatus and method for wafer pre-wetting (2025-07-22),

3. 12278203 - Semiconductor structure and manufacturing method thereof (2025-04-14),

4. 12237284 - Semiconductor structure comprising dummy feature interposed between the bonding connectors (2025-02-25),

5. 12227867 - Plating apparatus for plating semiconductor wafer and plating method (2025-02-18),

6. 12132079 - Bonding and isolation techniques for stacked transistor structures (2024-10-29),

7. 11869869 - Heterogeneous dielectric bonding scheme (2024-01-09),

8. 11823979 - Method of forming semiconductor device having backside interconnect structure on through substrate via (2023-11-21),

9. 11728296 - Interconnect structure and method of forming same (2023-08-15),

10. 11721666 - Isolation bonding film for semiconductor packages and methods of forming the same (2023-08-08),

11. 11688639 - Semiconductor device and method (2023-06-27),

12. 11585008 - Plating apparatus for plating semiconductor wafer and plating method (2023-02-21),

13. 11585005 - Apparatus and method for wafer pre-wetting (2023-02-21),

14. 11527439 - TSV structure and method forming same (2022-12-13),

15. 11296011 - Through-substrate vias with improved connections (2022-04-05),

Title: The Innovative Journey of Inventor Ku-Feng Yang

Introduction: Ku-Feng Yang, a talented inventor hailing from Dali, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Ku-Feng Yang holds several patents in the areas of electronics and renewable energy, showcasing his continuous commitment to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Ku-Feng Yang has worked tirelessly to develop cutting-edge solutions that have revolutionized the industry. His keen eye for detail and passion for innovation have led to the creation of several groundbreaking technologies.

Collaborations: Throughout his career, Ku-Feng Yang has collaborated with leading research institutions and tech companies to further his inventions. His ability to work in multidisciplinary teams has resulted in the successful development of innovative products that have had a lasting impact on the industry.

Conclusion: Ku-Feng Yang's dedication to innovation and his relentless pursuit of excellence have solidified his position as a pioneering inventor in the world of technology. His contributions continue to inspire future generations of inventors to push the boundaries of what is possible in the realm of technological innovation.

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