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For the Inventor, By the Inventor

Dali, Taiwan

Ku-Feng Yang

This inventor holds 87 USPTO granted patents and 34 published patent applications, primarily in Semiconductor Technology (CPC class H01L21-76898). Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2010-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ku-Feng Yang. Retrieved from https://idiyas.com/inventor/ku-feng-yang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 87 

% Patents Active = 80.5

Average Co-Inventor Count = 4.6

ph-index = 10

Forward Citations = 1,608(Granted Patents)

Forward Citations (Not Self Cited) = 1,436(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Taichung, TW (2011)
  • Dali, TW (2010 - 2017)
  • Hsinchu County, TW (2017 - 2023)
  • Baoshan Township, TW (2015 - 2024)

Company Filing History:

goldMedal87 out of 42,810 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2010-2026

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Areas of Expertise:
Thermal Dissipation
Interconnect Structures
TSV Formation
Wafer Pre-Wetting
Dielectric Bonding
Backside Interconnect
3DIC Interconnect
Isolation Bonding Film
Chip-On-Wafer
Conductive Structures
Dummy Features
Plating Methods
87 patents (USPTO):Explore Patents
1. 12720818 - Bonding and isolation techniques for stacked transistor structures (2026-08-25),
2. 12708030 - Method of filling gaps between dies using silicon dioxide (2026-08-11),
3. 12648222 - Gate patterning for stacked device structure using self-assembled monolayer (2026-06-02),
4. 12610586 - Semiconductor device and method for thermal dissipation (2026-04-21),
5. 12484253 - Metal features of a semiconductor device and methods for forming the same (2025-11-25),
6. 12366004 - Apparatus and method for wafer pre-wetting (2025-07-22),
7. 12278203 - Semiconductor structure and manufacturing method thereof (2025-04-14),
8. 12237284 - Semiconductor structure comprising dummy feature interposed between the bonding connectors (2025-02-25),
9. 12227867 - Plating apparatus for plating semiconductor wafer and plating method (2025-02-18),
10. 12132079 - Bonding and isolation techniques for stacked transistor structures (2024-10-29),
11. 11869869 - Heterogeneous dielectric bonding scheme (2024-01-09),
12. 11823979 - Method of forming semiconductor device having backside interconnect structure on through substrate via (2023-11-21),
13. 11728296 - Interconnect structure and method of forming same (2023-08-15),
14. 11721666 - Isolation bonding film for semiconductor packages and methods of forming the same (2023-08-08),
15. 11688639 - Semiconductor device and method (2023-06-27),

Title: The Innovative Journey of Inventor Ku-Feng Yang

Introduction: Ku-Feng Yang, a talented inventor hailing from Dali, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Ku-Feng Yang holds several patents in the areas of electronics and renewable energy, showcasing his continuous commitment to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Ku-Feng Yang has worked tirelessly to develop cutting-edge solutions that have revolutionized the industry. His keen eye for detail and passion for innovation have led to the creation of several groundbreaking technologies.

Collaborations: Throughout his career, Ku-Feng Yang has collaborated with leading research institutions and tech companies to further his inventions. His ability to work in multidisciplinary teams has resulted in the successful development of innovative products that have had a lasting impact on the industry.

Conclusion: Ku-Feng Yang's dedication to innovation and his relentless pursuit of excellence have solidified his position as a pioneering inventor in the world of technology. His contributions continue to inspire future generations of inventors to push the boundaries of what is possible in the realm of technological innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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