The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2023

Filed:

Dec. 16, 2019
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chen-Hua Yu, Hsinchu, TW;

Hung-Pin Chang, Taipei, TW;

Yi-Hsiu Chen, Hsinchu, TW;

Ku-Feng Yang, Baoshan Township, TW;

Wen-Chih Chiou, Zhunan Township, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 23/00 (2006.01); H01L 21/3065 (2006.01); H01L 21/306 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); H01L 24/97 (2013.01); H01L 21/02057 (2013.01); H01L 21/3065 (2013.01); H01L 21/30604 (2013.01); H01L 21/30608 (2013.01); H01L 2224/95 (2013.01);
Abstract

A semiconductor device and method of manufacture are provided. In an embodiment a first semiconductor device and a second semiconductor device are formed within a semiconductor wafer and a scribe region between the first semiconductor device and the second semiconductor device is patterned. A singulation process is then utilized within the scribe region to singulate the first semiconductor device from the second semiconductor device. The first semiconductor device and the second semiconductor device are then bonded to a second semiconductor substrate and thinned in order to remove extension regions from the first semiconductor device and the second semiconductor device.


Find Patent Forward Citations

Loading…