The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2023

Filed:

Oct. 19, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Hsiao Yun Lo, Hsinchu, TW;

Lin-Chih Huang, Hsinchu, TW;

Tasi-Jung Wu, Hsinchu, TW;

Hsin-Yu Chen, Taipei, TW;

Yung-Chi Lin, Su-Lin, TW;

Ku-Feng Yang, Baoshan Township, TW;

Tsang-Jiuh Wu, Hsinchu, TW;

Wen-Chih Chiou, Zhunan Township, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 23/481 (2013.01); H01L 24/03 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/0391 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/03602 (2013.01); H01L 2224/03614 (2013.01); H01L 2224/03616 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05008 (2013.01); H01L 2224/05012 (2013.01); H01L 2224/05017 (2013.01); H01L 2224/05025 (2013.01); H01L 2224/05026 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05083 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05139 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05181 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/05187 (2013.01); H01L 2224/05565 (2013.01); H01L 2224/05571 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05684 (2013.01); H01L 2224/1145 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13023 (2013.01); H01L 2224/13026 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13147 (2013.01); H01L 2924/00012 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/013 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/13091 (2013.01);
Abstract

A device includes a first side interconnect structure over a first side of a substrate, wherein active circuits are in the substrate and adjacent to the first side of the substrate, a dielectric layer over a second side of the substrate, a pad embedded in the dielectric layer, the pad comprising an upper portion and a bottom portion formed of two different materials and a passivation layer over the dielectric layer.


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