The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2022
Filed:
Dec. 31, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Ming-Tsu Chung, Hsinchu, TW;
Ku-Feng Yang, Baoshan Township, TW;
Tsang-Jiuh Wu, Hsinchu, TW;
Wen-Chih Chiou, Zhunan Township, TW;
Chen-Hua Yu, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method includes forming a plurality of dielectric layers over a semiconductor substrate, etching the plurality of dielectric layers and the semiconductor substrate to form an opening, depositing a first liner extending into the opening, and depositing a second liner over the first liner. The second liner extends into the opening. The method further includes filling a conductive material into the opening to form a through-via, and forming conductive features on opposing sides of the semiconductor substrate. The conductive features are electrically interconnected through the through-via.