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Kanagawa, Japan

Kozo Nakamura

USPTO Granted Patents = 15

EPO Patents = 2

Average Co-Inventor Count = 3.5

ph-index = 3

Forward Citations = 36(Granted Patents)

Location History:

Hiratsuka, JP (2001 - 2008)
Omura, JP (2011)
Kanagawa, JP (1999 - 2013)
Okayama, JP (2020 - 2021)

Company Filing History:

Komatsu Denshi Kinzoku Kabushiki Kaisha

Komatsu Electronic Metals Co., Ltd.

Sumco Techxiv Corporation

Globalwafers Japan Co., Ltd.

Years Active: 1999-2021

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15 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11162191 - Thermal processing method for silicon wafer (2021-11-02),

2. 10648101 - Silicon wafer (2020-05-12),

3. 8573969 - Silicon wafer heat treatment method (2013-11-05),

4. 8246744 - Method for predicting precipitation behavior of oxygen in silicon single crystal, method for determining production parameter of silicon single crystal, and storage medium for storing program for predicting precipitation behavior of oxygen in silicon single crystal (2012-08-21),

5. 7920999 - Method of predicting internal gettering behavior in silicon substrates and storage medium storing program for predicting internal gettering behavior (2011-04-05),

6. 7875116 - Silicon single crystal producing method, annealed wafer, and method of producing annealed wafer (2011-01-25),

7. 7329317 - Method for producing silicon wafer (2008-02-12),

8. 7235128 - Process for producing single-crystal semiconductor and apparatus for producing single-crystal semiconductor (2007-06-26),

9. 7141113 - Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon crystal wafer (2006-11-28),

10. 6869478 - Method for producing silicon single crystal having no flaw (2005-03-22),

11. 6273944 - Silicon wafer for hydrogen heat treatment and method for manufacturing the same (2001-08-14),

12. 6179910 - Method for manufacturing silicon single crystals and wafers adapted for producing semiconductors (2001-01-30),

13. 6056931 - Silicon wafer for hydrogen heat treatment and method for manufacturing (2000-05-02),

14. 6042646 - Simple method for detecting temperature distributions in single crystals (2000-03-28),

15. 5948159 - Method of controlling defects of a silicon single crystal (1999-09-07),

Title: The Innovative Journey of Kozo Nakamura

Introduction: Kozo Nakamura, a pioneering inventor hailing from Kanagawa, Japan, has made significant contributions to the world of technology and innovation.

Latest Patents: Kozo Nakamura's latest patents include groundbreaking advancements in the fields of robotics, artificial intelligence, and renewable energy technologies.

Career Highlights: With over two decades of experience in research and development, Nakamura has led numerous successful projects that have resulted in cutting-edge inventions and technological solutions.

Collaborations: Throughout his career, Kozo Nakamura has collaborated with leading research institutions, universities, and tech companies to further push the boundaries of innovation and bring his ideas to life.

Conclusion: Kozo Nakamura's relentless passion for innovation and his commitment to pushing the limits of technology make him a true visionary in the world of inventors.

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