The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2005
Filed:
Mar. 19, 2001
Kozo Nakamura, Kanagawa, JP;
Toshiaki Saishoji, Kanagawa, JP;
Shinji Togawa, Kanagawa, JP;
Toshirou Kotooka, Kanagawa, JP;
Susumu Maeda, Kanagawa, JP;
Kozo Nakamura, Kanagawa, JP;
Toshiaki Saishoji, Kanagawa, JP;
Shinji Togawa, Kanagawa, JP;
Toshirou Kotooka, Kanagawa, JP;
Susumu Maeda, Kanagawa, JP;
Komatsu Denshi Kinzoku Kabushiki Kaisha, Kanagawa, JP;
Abstract
A method for producing a silicon ingot having no defect over a wide range of region with stability and good reproducibility, wherein when a silicon single crystal () is pulled up form a silicon melt (), the shape of a solid-liquid interface () which a boundary between the silicon melt () and the silicon single crystal () and the temperature distribution on the side face () of a single crystal under being pulled up are appropriately controlled.