The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2012
Filed:
Jan. 27, 2005
Kozo Nakamura, Kanagawa, JP;
Junsuke Tomioka, Kanagawa, JP;
Tetsuro Akagi, Kanagawa, JP;
Shiro Yoshino, Kanagawa, JP;
Kozo Nakamura, Kanagawa, JP;
Junsuke Tomioka, Kanagawa, JP;
Tetsuro Akagi, Kanagawa, JP;
Shiro Yoshino, Kanagawa, JP;
Komatsu Denshi Kinzoku Kabushiki Kaisha, Kanagawa, JP;
Abstract
By specifying an initial oxygen concentration in a silicon single crystal and a concentration of thermal donors produced according to a thermal history from 400° C. to 550° C. that the silicon single crystal undergoes during crystal growth, a nucleation rate of oxygen precipitates produced in the silicon single crystal while the silicon single crystal is subjected to a heat treatment is determined. Further, by specifying the heat treatment condition of the silicon single crystal, an oxygen precipitate density and an amount of precipitated oxygen under a given heat treatment condition are predicted by calculation.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile