The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2011
Filed:
Jun. 05, 2006
Kozo Nakamura, Omura, JP;
Kozo Nakamura, Omura, JP;
Sumco Techxiv Corporation, Kanagawa, JP;
Abstract
Internal gettering behavior in a silicon substrate is predicted by using an arithmetic expression established among an initial iron contamination concentration Cin the silicon substrate, a density N of oxygen precipitates, a radius R of the oxygen precipitates, internal gettering heat treatment temperature T, internal gettering heat treatment time t, and a concentration C(t) of iron (Fe) remaining in the silicon substrate after a heat treatment. In the prediction of internal gettering behavior in the silicon substrate, an arithmetic expression is added considering a process in which nuclei of a contaminant heavy metal silicide are generated on the surface of the oxygen precipitates, and a process in which the contaminant heavy metal is gettered by the oxygen precipitates having the contaminant heavy metal silicide nuclei generated on the surface thereof. This invention is also applicable for internal gettering of a contaminant heavy metal other than iron (Fe), such as copper (Cu), nickel (Ni) or the like.
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