The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Sep. 28, 2007
Shinya Sadohara, Kanagawa, JP;
Kozo Nakamura, Kanagawa, JP;
Shiro Yoshino, Kanagawa, JP;
Sumco TechXIV Corporation, Nagasaki, JP;
Abstract
A silicon wafer preferable to a semiconductor device is produced by determining a heat treatment condition hardly causing slip dislocations and heat-treating the silicon wafer under the condition. The resistance is calculated by using a calculation formula used for predicting the slip resistance of the wafer from the density, size, and residual solid-solution oxygen concentration of the oxygen precipitation in the silicon wafer, the state of oxygen precipitation such that heat treatment not causing any slip dislocation can be carried out is designed, and thus a silicon wafer heat treatment method under the heat treatment condition not causing any slip dislocation is determined. A silicon wafer heat-treated under such a condition can be provided.