Ichihara, Japan

Koji Kamei

This inventor holds 21 USPTO granted patents and 4 EPO patents, primarily in SiC Epitaxial Wafer. Top assignees: Showa Denko K.k., Toyoda Gosei Co., Ltd.. Active years: 2008-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Koji Kamei. Retrieved from https://idiyas.com/inventor/koji-kamei

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 95.2

 

Average Co-Inventor Count = 1.6

ph-index = 4

Forward Citations = 57(Granted Patents)


Location History:

  • Ichihara, JP (2008 - 2014)
  • Hikone, JP (2020 - 2022)
  • Chichibu, JP (2020 - 2023)

Company Filing History:


Years Active: 2008-2023

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Areas of Expertise:
SiC Epitaxial Wafer
Defect Evaluation
Gallium Nitride
Light-Emitting Device
Manufacturing Method
Semiconductor
Wafer Production
Transparent Electrode
Positive Electrode
Compound Semiconductor
21 patents (USPTO):Explore Patents

Title: **Innovative Contributions of Koji Kamei in Silicon Carbide Technology**

Introduction

Koji Kamei, an influential inventor based in Ichihara, Japan, has made significant strides in the field of silicon carbide (SiC) technology. With a remarkable portfolio of 21 patents, Kamei's work primarily focuses on enhancing the performance and manufacturing processes of SiC epitaxial wafers, crucial components in modern electronic devices. This article delves into his latest patents, career highlights, and collaborations that have contributed to advancing this technology.

Latest Patents

Kamei's recent innovations include pivotal patents such as the "SiC epitaxial wafer and method for manufacturing same." This patent describes an SiC epitaxial wafer that consists of a 4H-SiC single crystal substrate featuring an off-angle surface in relation to a c-plane, coupled with a SiC epitaxial layer of 20 µm or greater. Notably, the interface dislocation density extending from the outer peripheral edge of this epitaxial layer is limited to 10 lines/cm or less, showcasing Kamei's commitment to improving crystal quality. Another significant patent details a SiC epitaxial wafer that minimizes large pit defects, achieving a surface density of 0.5 defects/cm² or less, effectively addressing challenges posed by substrate carbon inclusions.

Career Highlights

Throughout his career, Koji Kamei has been associated with prominent organizations such as Showa Denko K.K. and Toyoda Gosei Co., Ltd. His roles in these companies have allowed him to leverage cutting-edge research and drive innovations in wafer technology. Kamei's expertise has played a vital role in enhancing the efficiency and reliability of silicon carbide products, which are increasingly used in various high-performance applications, including power electronics and electric vehicles.

Collaborations

Kamei's innovations have been further enriched through collaborations with esteemed colleagues like Yoshitaka Nishihara and Munetaka Watanabe. Together, they have shared insights and expertise that have propelled advancements in SiC technologies, demonstrating the power of teamwork in driving innovation in this highly specialized field.

Conclusion

Koji Kamei stands out as a leading inventor in the realm of silicon carbide technology, with a considerable number of patents that reflect his dedication to improving manufacturing processes and product quality. His work not only contributes to the technological landscape in Japan but also impacts global industries that rely on SiC wafers for their operations. As innovation continues to shape the future of electronics, Kamei's contributions will undoubtedly inspire further advancements in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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