The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2014
Filed:
Oct. 27, 2010
Koji Kamei, Ichihara, JP;
Honglin Wang, Ichihara, JP;
Koji Kamei, Ichihara, JP;
Honglin Wang, Ichihara, JP;
Toyoda Gosei Co., Ltd., Aichi, JP;
Abstract
A semiconductor light emitting element () provided with an n-type semiconductor layer (), a light emitting layer (), a p-type semiconductor layer (), a transparent electrode (), a p-side electrode () formed on the transparent electrode, and an n-side electrode () formed on the n-type semiconductor layer. The p-side electrode has a p-side joining layer () and a p-side bonding pad electrode (), which are laminated on the transparent electrode, and the n-side electrode has an n-side joining layer () and an n-side bonding pad electrode (), which are laminated on the n-type semiconductor layer. The p-side joining layer and the n-side joining layer are configured of a mixed layer composed of TaN and Pt, and the p-side bonding pad electrode and the n-side bonding pad electrode are configured of a laminated structure composed of Pt and Au.