The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2011
Filed:
May. 10, 2010
Koji Kamei, Ichihara, JP;
Koji Kamei, Ichihara, JP;
Showa Denko K.K., Tokyo, JP;
Abstract
The present disclosure relates to a gallium nitride-based compound semiconductor light-emitting device with low driving voltage and high light emission output, which has a positive electrode comprising a transparent electrically conducting layer put into direct contact with a p-type semiconductor layer. An embodiment of the disclosure includes a gallium nitride-based compound semiconductor light-emitting device, which includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, which may be formed in this order on a substrate, wherein each layer comprises a gallium nitride-based compound semiconductor, the light-emitting device has a negative electrode and a positive electrode provided on the n-type semiconductor layer and a region having a semiconductor metal concentration of 20 at. % or more, based on all metals, is present in the transparent electrically conducting film on the semiconductor side surface of the transparent electrically conducting film.