The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2021
Filed:
Oct. 11, 2019
Applicant:
Showa Denko K.k., Tokyo, JP;
Inventors:
Yoshitaka Nishihara, Chichibu, JP;
Koji Kamei, Hikone, JP;
Assignee:
SHOWA DENKO K.K., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/67 (2006.01); C30B 29/06 (2006.01); C30B 29/36 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67288 (2013.01); C30B 29/06 (2013.01); C30B 29/36 (2013.01); H01L 21/02167 (2013.01);
Abstract
A SiC substrate includes a first principal surface, a second principal surface disposed on a side opposite to the first principal surface, and an outer periphery connected to the first principal surface and the second principal surface, wherein a density of composite defects present at a peripheral edge portion of the SiC substrate, in which a hollow portion and a dislocation line extending from the hollow portion are connected to each other is equal to or greater than 0.01 pieces/cmand equal to or less than 10 pieces/cm.