Location History:
- Tokyo, JP (1991)
- Chichibu, JP (2020 - 2022)
Company Filing History:
5 out of 1,960 
2 out of 290 
1 out of 1,268 
Years Active: 1991-2025
Title: The Innovations of Yoshitaka Nishihara
Introduction
Yoshitaka Nishihara is a prominent inventor based in Chichibu, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of silicon carbide (SiC) materials. With a total of eight patents to his name, Nishihara's work has advanced the manufacturing processes of SiC epitaxial wafers.
Latest Patents
Nishihara's latest patents include a method of manufacturing a SiC epitaxial wafer. This method involves forming a SiC epitaxial layer on a SiC single crystal substrate. It includes identifying the total number of large-pit defects caused by micropipes and substrate carbon inclusions using microscopic and photoluminescence images. Additionally, he has developed a method that identifies the locations of these defects, further enhancing the quality of the SiC epitaxial layer. His innovations also encompass a SiC substrate design that minimizes bowing to less than 40 μm, ensuring better performance in applications.
Career Highlights
Throughout his career, Yoshitaka Nishihara has worked with notable companies such as Showa Denko K.K. and Resonac Corporation. His experience in these organizations has allowed him to refine his expertise in semiconductor materials and manufacturing techniques.
Collaborations
Nishihara has collaborated with esteemed colleagues, including Koji Kamei and Kenjiro Kishikawa. These partnerships have contributed to the advancement of his research and the successful development of his patented technologies.
Conclusion
Yoshitaka Nishihara's contributions to the field of semiconductor technology through his innovative patents and collaborations have significantly impacted the industry. His work continues to pave the way for advancements in SiC materials and manufacturing processes.