Showa Denko K.k.

Resonac Corporation

Toppan Printing Co., Ltd.

Yoshitaka Nishihara

Koji Kamei

Keisuke Fukada

Hiromasa Suo

Kenjiro Kishikawa

Masayuki Okudaira

A method of manufacturing a SiC epitaxial wafer in which a SiC epitaxial layer is formed on a SiC single crystal substrate, the method including identifying a total number of large-pit defects caused by micropipes in the SiC single crystal substrate and large-pit defects caused by substrate carbon inclusions, both of which are contained in the SiC epitaxial layer, using microscopic and photoluminescence images. Also disclosed is a method of manufacturing a SiC epitaxial wafer in which a SiC epitaxial layer is formed on a single crystal substrate, the method including identifying locations of the large-pit defects caused by micropipes in the SiC single crystal substrate and the large-pit defects caused by substrate carbon inclusions in the SiC epitaxial layer, using microscopic and photoluminescence images.

SiC epitaxial wafer, and method of manufacturing the same

In a SiC substrate of the present invention, in a case where the SiC substrate is supported on an inner periphery by an inner peripheral support surface positioned to overlap a circumference having a radius of 17.5 mm from a center, in a case where a plane connecting first points of an upper surface overlapping the inner peripheral support surface when seen in a thickness direction is defined as a first reference plane, and an upper side of the first reference plane is defined as a positive side, a bow is less than 40 μm.

SiC substrate and SiC epitaxial wafer

An evaluation method of a SiC epitaxial wafer includes: a first observation step of preparing a SiC epitaxial wafer having a high-concentration epitaxial layer having an impurity concentration of 1&#xd7;10cmor more, irradiating a surface of the high-concentration epitaxial layer having an impurity concentration of 1&#xd7;10cmor more with excitation light, and observing a surface irradiated with the excitation light via a band-pass filter having a wavelength band of 430 nm or less.

Evaluation method and manufacturing method of SiC epitaxial wafer

A SiC epitaxial wafer, including: a SiC substrate; and an epitaxial layer stacked on a first surface of the SiC substrate, wherein an area occupied by bar-shaped stacking faults on the first surface of the SiC substrate is identified, and the area occupied by bar-shaped stacking faults on the first surface of the SiC substrate is equal to or less than &#xbc; of the first surface area of the SiC substrate.

SiC substrate evaluation method and method for manufacturing SiC epitaxtal wafer

The invention provides a method of manufacturing a SiC epitaxial wafer in which stacking faults are less likely to occur when a current is passed in a forward direction. The method of manufacturing the SiC epitaxial wafer includes a measurement step for measuring a basal plane dislocation density, a layer structure determining process for determining the layer structure of the epitaxial layer, and an epitaxial growth step for growing the epitaxial layers. And in the layer structure determination step, in the case of (i) when the basal plane dislocation density is lower than a predetermined value, the epitaxial layer includes a conversion layer and a drift layer from the SiC substrate side; and in the case of (ii) when the density is equal to or higher than the predetermined value, the epitaxial layer includes a conversion layer, a recombination layer, and a drift layer from the SiC substrate side.

Method of manufacturing SiC epitaxial wafer

A SiC substrate includes a first principal surface, a second principal surface disposed on a side opposite to the first principal surface, and an outer periphery connected to the first principal surface and the second principal surface, wherein a density of composite defects present at a peripheral edge portion of the SiC substrate, in which a hollow portion and a dislocation line extending from the hollow portion are connected to each other is equal to or greater than 0.01 pieces/cmand equal to or less than 10 pieces/cm.

SiC substrate, SiC epitaxial wafer, and method of manufacturing the same

In a SiC substrate evaluation method, a bar-shaped stacking fault is observed by irradiating a surface of a SiC substrate before stacking an epitaxial layer with excitation light and extracting light having a wavelength range from equal to or greater than 405 nm and equal to or less than 445 nm among photoluminescence light beams emitted from the first surface.

Growing community of inventors

Chichibu, Japan

Yoshitaka Nishihara