The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2022
Filed:
May. 26, 2020
Applicant:
Showa Denko K. K., Tokyo, JP;
Inventors:
Yoshitaka Nishihara, Chichibu, JP;
Koji Kamei, Hikone, JP;
Assignee:
SHOWA DENKO K.K., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/88 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
G01N 21/8806 (2013.01); G01N 2021/8845 (2013.01); H01L 29/1608 (2013.01);
Abstract
A SiC epitaxial wafer, including: a SiC substrate; and an epitaxial layer stacked on a first surface of the SiC substrate, wherein an area occupied by bar-shaped stacking faults on the first surface of the SiC substrate is identified, and the area occupied by bar-shaped stacking faults on the first surface of the SiC substrate is equal to or less than ¼ of the first surface area of the SiC substrate.