The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Feb. 16, 2016
Applicant:
Showa Denko K.k., Tokyo, JP;
Inventors:
Jun Norimatsu, Yokohama, JP;
Akira Miyasaka, Chichibu, JP;
Yoshiaki Kageshima, Yokohama, JP;
Koji Kamei, Chichibu, JP;
Daisuke Muto, Kusatsu, JP;
Assignee:
SHOWA DENKO K.K., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/36 (2006.01); H01L 21/20 (2006.01); H01L 21/205 (2006.01);
U.S. Cl.
CPC ...
C30B 29/36 (2013.01); H01L 21/20 (2013.01); H01L 21/2003 (2013.01); H01L 21/205 (2013.01); H01L 21/2053 (2013.01);
Abstract
A SiC epitaxial wafer having a SiC epitaxial layer formed on a SiC single crystal substrate having an offset angle of 4 degrees or less in a<11-20>direction from a (0001) plane. A trapezoidal defect included in the SiC epitaxial wafer includes an inverted trapezoidal defect in which a length of a lower base on a downstream side of a step flow is equal to or less than a length of an upper base on an upstream side of the step flow. Also disclosed is a method for manufacturing the SiC epitaxial wafer.