Chichibu, Japan

Yoshiaki Kageshima

USPTO Granted Patents = 8 

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Location History:

  • Chichibu, JP (2016 - 2019)
  • Yokohama, JP (2019 - 2020)

Company Filing History:


Years Active: 2016-2020

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8 patents (USPTO):Explore Patents

Title: An Insight into the Innovations of Yoshiaki Kageshima

Introduction

Yoshiaki Kageshima is a notable inventor based in Chichibu, Japan. He holds a remarkable portfolio of 8 patents, primarily focused on advancements in silicon carbide (SiC) technology. His contributions have significantly impacted the fields of materials science and engineering, particularly in the production of epitaxial wafers.

Latest Patents

His latest patents include a "SiC epitaxial wafer and method for manufacturing SiC epitaxial wafer." This invention details a SiC epitaxial wafer featuring an epitaxial layer formed on a SiC single crystal substrate with a precise offset angle of 4 degrees or less in the <11-20> direction from the (0001) plane. A distinctive aspect of this invention is the innovative trapezoidal defect integrated into the wafer, which includes an inverted trapezoidal defect designed to enhance the quality of the epitaxial layer. Additionally, he developed an "Apparatus for producing SiC epitaxial wafer and method for producing SiC epitaxial wafer," which includes a specialized mounting plate and satellite arrangement to optimize the production process.

Career Highlights

Yoshiaki Kageshima has made significant strides in his career as an inventor working with Showa Denko K.K. His expertise in the manufacturing of semiconductor materials has earned him recognition in the industry. The development of his latest patents reflects his commitment to advancing technologies that enhance the performance of electronic devices.

Collaborations

Throughout his career, Kageshima has collaborated with esteemed colleagues, including Daisuke Muto and Kenji Momose. Their joint efforts have fostered a dynamic working environment that encourages innovative thinking and technological advancement in the semiconductor field.

Conclusion

Yoshiaki Kageshima's contributions to the development of SiC epitaxial wafers exemplify the spirit of innovation that drives progress in technology. His extensive patent portfolio not only highlights his individual expertise but also underscores the importance of collaboration in the field of materials science. As the demand for advanced semiconductor materials continues to grow, Kageshima's work will undoubtedly play a pivotal role in shaping the future of electronic devices.

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