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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10176987 B1

PDFFull Text
Date of Patent:
Jan. 08, 2019

Filed:

May. 04, 2017

Sic epitaxial wafer and method for manufacturing the same

Applicant:

Showa Denko K.k., Tokyo, JP;

Inventors:

Akira Miyasaka, Chichibu, JP;

Yutaka Tajima, Chichibu, JP;

Yoshiaki Kageshima, Chichibu, JP;

Daisuke Muto, Chichibu, JP;

Kenji Momose, Chichibu, JP;

Assignee:

SHOWA DENKO K.K., Tokyo, JP;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Hoang-Quan Ho

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/34 (2006.01); C23C 16/32 (2006.01); H01L 29/16 (2006.01); H01L 29/06 (2006.01); C30B 25/18 (2006.01); C30B 25/00 (2006.01); C30B 29/36 (2006.01); C30B 25/20 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0262 (2013.01); C23C 16/325 (2013.01); C30B 25/00 (2013.01); C30B 25/186 (2013.01); C30B 25/20 (2013.01); C30B 29/36 (2013.01); H01L 21/02529 (2013.01); H01L 29/0692 (2013.01); H01L 29/1608 (2013.01); H01L 29/34 (2013.01); H01L 21/02378 (2013.01); H01L 21/02433 (2013.01); H01L 21/02576 (2013.01); H01L 22/12 (2013.01);
Abstract

A SiC epitaxial wafer including: a SiC epitaxial layer that is formed on a SiC substrate having an off angle, wherein the surface density of triangular defects, in which a distance from a starting point to an opposite side in a horizontal direction is equal to or greater than (a thickness of the SiC epitaxial layer/tan(x))×90% and equal to or less than (the thickness of the SiC epitaxial layer/tan(x))×110%, in the SiC epitaxial layer is in the range of 0.05 pieces/cmto 0.5 pieces/cm(where x indicates the off angle).

Find Patent Forward Citations

Miyasaka, Akira. (2019). Sic epitaxial wafer and method for manufacturing the same (U.S. Patent No. 10176987). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10176987

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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