Company Filing History:
9 out of 1,960 
2 out of 1,717 
2 out of 110 
Years Active: 2012-2019
Title: Kenji Momose: Innovator in SiC Epitaxial Wafer Technology
Introduction
Kenji Momose is a prominent inventor based in Chichibu, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of silicon carbide (SiC) epitaxial wafers. With a total of nine patents to his name, Momose's work has advanced the manufacturing processes and quality of SiC materials.
Latest Patents
Among his latest patents is a method for manufacturing a SiC epitaxial wafer. This invention includes a SiC epitaxial layer formed on a SiC substrate with an off angle. The patent specifies that the surface density of triangular defects in the SiC epitaxial layer must fall within a defined range, ensuring high-quality wafer production. Another notable patent involves a manufacturing method that measures the surface density of triangular defects originating from internal chamber materials, enhancing the reliability of the SiC epitaxial wafer production process.
Career Highlights
Kenji Momose has worked with notable organizations such as Showa Denko K.K. and the National Institute of Advanced Industrial Science and Technology. His experience in these institutions has allowed him to refine his expertise in semiconductor materials and manufacturing techniques.
Collaborations
Throughout his career, Momose has collaborated with esteemed colleagues, including Yoshiaki Kageshima and Daisuke Muto. These partnerships have contributed to the advancement of research and innovation in the semiconductor industry.
Conclusion
Kenji Momose's contributions to SiC epitaxial wafer technology have positioned him as a key figure in the field. His innovative patents and collaborative efforts continue to influence the semiconductor industry, paving the way for future advancements.