Showa Denko K.k.

National Institute of Advanced Industrial Science and Technology

Central Research Institute of Electric Power Industry

Kenji Momose

Daisuke Muto

Yoshiaki Kageshima

Michiya Odawara

Yutaka Tajima

Hidekazu Tsuchida

Isaho Kamata

Kazutoshi Kojima

Akira Miyasaka

Hajime Okumura

Keiichi Matsuzawa

Yuuki Ishida

Yoshihiko Miyasaka

Yasuyuki Sakaguchi

Tomoyuki Noguchi

A SiC epitaxial wafer including: a SiC epitaxial layer that is formed on a SiC substrate having an off angle, wherein the surface density of triangular defects, in which a distance from a starting point to an opposite side in a horizontal direction is equal to or greater than (a thickness of the SiC epitaxial layer/tan(x))&#xd7;90% and equal to or less than (the thickness of the SiC epitaxial layer/tan(x))&#xd7;110%, in the SiC epitaxial layer is in the range of 0.05 pieces/cmto 0.5 pieces/cm(where x indicates the off angle).

SiC epitaxial wafer and method for manufacturing the same

A SiC epitaxial wafer manufacturing method of the present invention includes: manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a surface of a SiC single crystal wafer while supplying a raw material gas into a chamber using a SiC epitaxial wafer manufacturing apparatus; and manufacturing a subsequent SiC epitaxial wafer after measuring a surface density of triangular defects originating from a material piece of an internal member of the chamber on the SiC epitaxial layer of the previously manufactured SiC epitaxial wafer.

SiC epitaxial wafer and method for producing same, and device for producing SiC epitaxial wafer

Provided is a method of manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a SiC substrate using a SiC-CVD furnace which is installed in a glove box. The method includes a SiC substrate placement step of placing the SiC substrate in the SiC-CVD furnace while circulating gas in the glove box.

An epitaxial wafer manufacturing device, including a shield (), which in addition to being removably attached inside a chamber, is arranged in close proximity to the lower surface of a top plate (). The shield has a substrate () having an opening () in the central portion thereof that forces a gas inlet () to face the inside of a reaction space (K), and a thin film () that covers the lower surface of the substrate. The surface of the thin film has the shape of surface irregularities corresponding to fine surface irregularities formed in the lower surface of the substrate. When the shield has undergone thermal deformation as a result of being heated by heating means (), deposits deposited on the lower surface of the shield are inhibited from falling off by the shape of the surface irregularities.

Epitaxial wafer manufacturing device and manufacturing method

Provided is an epitaxial wafer manufacturing device () that deposits and grows epitaxial layers on the surfaces of wafers W while supplying a raw material gas to a chamber, wherein a shield (), arranged in close proximity to the lower surface of a top plate () so as to prevent deposits from being deposited on the lower surface of the top plate (), is removably attached inside the chamber, has an opening () in the central portion thereof that forces a gas inlet () to face the inside of a reaction space K, and has a structure in which it is concentrically divided into a plurality of ring plates (), () and () around the opening ().

A method of manufacturing a SiC epitaxial wafer wherein a SiC epitaxial layer is provided on a SiC single crystal substrate having an off angle. The method includes determining a ratio of basal plane dislocations (BPD) which cause stacking faults in a SiC epitaxial film of a prescribed thickness, to basal plane dislocations which are present on a growth surface of the SiC single crystal substrate, determining an upper limit of surface density of basal plane dislocations, preparing a SiC single crystal substrate which has surface density equal to or less than the above upper limit, and forming a SiC epitaxial film on the SiC single crystal substrate under the same conditions as the growth conditions of the epitaxial film used in the step of determining the ratio.

SIC epitaxial wafer and method for manufacturing same

Provided is a silicon carbide epitaxial wafer, the entire surface of which is free of step bunching. Also provided is a method for manufacturing said silicon carbide epitaxial wafer. The provided method for manufacturing a silicon carbide semiconductor device includes: a step wherein a 4H&#x2014;SiC single-crystal substrate having an off-axis angle of 5&#xb0; or less is polished until the lattice disorder layer on the surface of the substrate is 3 nm or less; a step wherein, in a hydrogen atmosphere, the polished substrate is brought to a temperature between 1400&#xb0; C. and 1600&#xb0; C. and the surface of the substrate is cleaned; a step wherein silicon carbide is epitaxially grown on the surface of the cleaned substrate as the amounts of SiHgas and CHgas considered necessary for epitaxially growing silicon carbide are supplied simultaneously at a carbon-to-silicon concentration ratio between 0.7 and 1.2 to 1; and a step wherein the supply of SiHgas and the supply of CHgas are cut off simultaneously, the substrate temperature is maintained until the SiHgas and the CHgas are evacuated, and then the temperature is decreased.

Silicon carbide epitaxial wafer and manufacturing method therefor

An epitaxial SiC single crystal substrate including a SiC single crystal wafer whose main surface is a c-plane or a surface that inclines a c-plane with an angle of inclination that is more than 0 degree but less than 10 degrees, and SiC epitaxial film that is formed on the main surface of the SiC single crystal wafer, wherein the dislocation array density of threading edge dislocation arrays that are formed in the SiC epitaxial film is 10 arrays/cmor less.

Growing community of inventors

Chichibu, Japan

Kenji Momose