The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2012
Filed:
Sep. 12, 2008
Kenji Momose, Chichibu, JP;
Michiya Odawara, Chichibu, JP;
Keiichi Matsuzawa, Kumagaya, JP;
Hajime Okumura, Tsukuba, JP;
Kazutoshi Kojima, Tsukuba, JP;
Yuuki Ishida, Tsukuba, JP;
Hidekazu Tsuchida, Yokosuka, JP;
Isaho Kamata, Tokyo, JP;
Kenji Momose, Chichibu, JP;
Michiya Odawara, Chichibu, JP;
Keiichi Matsuzawa, Kumagaya, JP;
Hajime Okumura, Tsukuba, JP;
Kazutoshi Kojima, Tsukuba, JP;
Yuuki Ishida, Tsukuba, JP;
Hidekazu Tsuchida, Yokosuka, JP;
Isaho Kamata, Tokyo, JP;
Showa Denko K.K., Tokyo, JP;
National Institute of Advanced Industrial Science and Technology, Tokyo, JP;
Central Research Institute of Electric Power Industry, Tokyo, JP;
Abstract
An epitaxial SiC single crystal substrate including a SiC single crystal wafer whose main surface is a c-plane or a surface that inclines a c-plane with an angle of inclination that is more than 0 degree but less than 10 degrees, and SiC epitaxial film that is formed on the main surface of the SiC single crystal wafer, wherein the dislocation array density of threading edge dislocation arrays that are formed in the SiC epitaxial film is 10 arrays/cmor less.