Hajime Okumura

Title: Hajime Okumura: Innovator in Epitaxial SiC Technology

Introduction

Hajime Okumura is a prominent inventor based in Tsukuba, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of epitaxial silicon carbide (SiC) substrates. With a total of four patents to his name, Okumura's work has advanced the manufacturing processes and applications of SiC materials.

Latest Patents

Okumura's latest patents focus on the creation of epitaxial SiC single crystal substrates. These substrates include a SiC single crystal wafer with a main surface that is either a c-plane or a surface inclined at an angle between 0 and 10 degrees. The SiC epitaxial film formed on the wafer's main surface is characterized by a low dislocation array density of threading edge dislocation arrays, specifically 10 arrays/cm or less. This innovation is crucial for enhancing the performance and reliability of semiconductor devices.

Career Highlights

Throughout his career, Hajime Okumura has worked with esteemed organizations such as the National Institute of Advanced Industrial Science and Technology and Showa Denko K.K. His experience in these institutions has allowed him to refine his expertise in semiconductor materials and processes, contributing to his reputation as a leading inventor in the field.

Collaborations

Okumura has collaborated with notable colleagues, including Kazutoshi Kojima and Kenji Momose. These partnerships have fostered a collaborative environment that has led to innovative advancements in SiC technology.

Conclusion

Hajime Okumura's contributions to the field of epitaxial SiC technology have positioned him as a key figure in semiconductor innovation. His patents and career achievements reflect his dedication to advancing the industry and improving the performance of electronic devices.