National Institute of Advanced Industrial Science and Technology

Showa Denko K.k.

Central Research Institute of Electric Power Industry

Sumitomo Chemical Company, Limited

Toyoda Gosei Co., Ltd.

Hajime Okumura

Kazutoshi Kojima

Hidekazu Tsuchida

Isaho Kamata

Kenji Momose

Michiya Odawara

Keiichi Matsuzawa

Yuuki Ishida

Masayoshi Kosaki

Koji Hirata

Hiroyuki Sazawa

Satoshi Kuroda

An epitaxial SiC single crystal substrate including a SiC single crystal wafer whose main surface is a c-plane or a surface that inclines a c-plane with an angle of inclination that is more than 0 degree but less than 10 degrees, and SiC epitaxial film that is formed on the main surface of the SiC single crystal wafer, wherein the dislocation array density of threading edge dislocation arrays that are formed in the SiC epitaxial film is 10 arrays/cmor less.

Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrate

An epitaxial crystal for a field effect transistor which has a nitride-based III-V group semiconductor epitaxial crystal grown on a SiC single crystal base substrate having micropipes by use of an epitaxial growth method, wherein at least a part of the micropipes spreading from the SiC single crystal base substrate into the epitaxial crystal terminate between an active layer of the transistor and the SiC single crystal base substrate.

Epitaxial substrate for field effect transistor

Provided is a silicon carbide epitaxial wafer which is formed on a substrate that is less than 1&#xb0; off from the {0001} surface of silicon carbide having an &#x3b1;-type crystal structure, wherein the crystal defects in the SiC epitaxial wafer are reduced while the flatness of the surface thereof is improved.

Silicon carbide epitaxial wafer, method for producing such wafer, and semiconductor device formed on such wafer

Growing community of inventors

Tsukuba, Japan

Hajime Okumura