The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2009
Filed:
Aug. 19, 2004
Applicants:
Kazutoshi Kojima, Ibaraki, JP;
Satoshi Kuroda, Ibaraki, JP;
Hajime Okumura, Ibaraki, JP;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0312 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided is a silicon carbide epitaxial wafer which is formed on a substrate that is less than 1° off from the {0001} surface of silicon carbide having an α-type crystal structure, wherein the crystal defects in the SiC epitaxial wafer are reduced while the flatness of the surface thereof is improved.
Kojima, Kazutoshi. (2009). Silicon carbide epitaxial wafer, method for producing such wafer, and semiconductor device formed on such wafer (U.S. Patent No. 7635868). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7635868
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile