The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2010
Filed:
Mar. 23, 2006
Hiroyuki Sazawa, Tsukuba, JP;
Koji Hirata, Haruhi, JP;
Masayoshi Kosaki, Haruhi, JP;
Hajime Okumura, Tsukuba, JP;
Hiroyuki Sazawa, Tsukuba, JP;
Koji Hirata, Haruhi, JP;
Masayoshi Kosaki, Haruhi, JP;
Hajime Okumura, Tsukuba, JP;
Sumitomo Chemical Company, Limited, Tokyo, JP;
Toyoda Gosei Co., Ltd., Nishikasugai-Gun, JP;
National Institute of Advanced Industrial Science and Technology, Tokyo, JP;
Abstract
An epitaxial crystal for a field effect transistor which has a nitride-based III-V group semiconductor epitaxial crystal grown on a SiC single crystal base substrate having micropipes by use of an epitaxial growth method, wherein at least a part of the micropipes spreading from the SiC single crystal base substrate into the epitaxial crystal terminate between an active layer of the transistor and the SiC single crystal base substrate.