Company Filing History:
Years Active: 2009-2016
Title: Innovator Michiya Odawara: Pioneering Silicon Carbide Epitaxy
Introduction
Michiya Odawara, an influential inventor based in Chichibu, Japan, has made significant strides in the field of silicon carbide (SiC) technologies. With five patents to his name, Odawara's innovations focus on the manufacturing processes of SiC epitaxial wafers, which are crucial for various electronic applications.
Latest Patents
Odawara's most recent patents include a method for manufacturing SiC epitaxial wafers and the silicon carbide epitaxial wafers themselves. His first patent introduces a novel approach to producing a SiC epitaxial layer on a single crystal substrate with off angles. The method involves assessing the ratio of basal plane dislocations that lead to stacking faults in the epitaxial film and preparing a substrate with controlled dislocation densities. The second patent relates to creating a silicon carbide epitaxial wafer that is free of step bunching, enhancing the quality of the semiconductor material. This method includes steps such as polishing the substrate, cleaning it in a hydrogen atmosphere at elevated temperatures, and epitaxially growing silicon carbide with precise control over the gas concentrations involved.
Career Highlights
Throughout his career, Michiya Odawara has been affiliated with prestigious organizations, including Showa Denko K.K. and the National Institute of Advanced Industrial Science and Technology (AIST). His work has significantly contributed to advancements in semiconductor technologies, particularly in the growth and characterization of silicon carbide materials.
Collaborations
Odawara has collaborated with esteemed colleagues such as Kenji Momose and Keiichi Matsuzawa, working together to enhance the understanding and application of silicon carbide in modern electronics. Their combined expertise has driven innovation within their respective institutions.
Conclusion
In summary, Michiya Odawara stands out as a prolific inventor whose contributions to silicon carbide epitaxy are paving the way for improvements in semiconductor technology. His patents not only demonstrate his innovative spirit but also show the potential for advancements in electronic devices that rely on high-quality materials. As the demand for effective semiconductor solutions continues to grow, Odawara's work serves as a vital cornerstone in this evolving field.