The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2009
Filed:
Oct. 22, 2004
Michiya Odawara, Chichibu, JP;
Akira Kasahara, Chichibu, JP;
Takashi Udagawa, Chichibu, JP;
Showa Denko K.K., Tokyo, JP;
Abstract
A pn-heterojunction compound semiconductor light-emitting device includes a crystalline substratea lower cladding layerformed on a surface of the crystalline substrate and composed of an n-type Group III-V compound semiconductor, a light-emitting layerformed on a surface of the lower cladding layer and composed of an n-type Group III-V compound semiconductor, an upper cladding layerformed on a surface of the light-emitting layer and composed of p-type boron phosphide, an n-type electrodeattached to the lower cladding layer and a p-type electrodeattached to the upper cladding layer. The lower and upper cladding layers are opposed to each other and sandwich the light-emitting layer to form, in cooperation with the light-emitting layer, a light-emitting portion of a pn-heterojunction structure. The light-emitting device has an intermediate layercomposed of an n-type boron-containing Group III-V compound between the light-emitting layer and the upper cladding layer.