Showa Denko K.k.

National Institute of Advanced Industrial Science and Technology

Central Research Institute of Electric Power Industry

Michiya Odawara

Kenji Momose

Hidekazu Tsuchida

Isaho Kamata

Kazutoshi Kojima

Hajime Okumura

Keiichi Matsuzawa

Yuuki Ishida

Takashi Udagawa

Daisuke Muto

Yoshiaki Kageshima

Yasuyuki Sakaguchi

Akira Kasahara

Yutaka Tajima

Yoshihiko Miyasaka

A method of manufacturing a SiC epitaxial wafer wherein a SiC epitaxial layer is provided on a SiC single crystal substrate having an off angle. The method includes determining a ratio of basal plane dislocations (BPD) which cause stacking faults in a SiC epitaxial film of a prescribed thickness, to basal plane dislocations which are present on a growth surface of the SiC single crystal substrate, determining an upper limit of surface density of basal plane dislocations, preparing a SiC single crystal substrate which has surface density equal to or less than the above upper limit, and forming a SiC epitaxial film on the SiC single crystal substrate under the same conditions as the growth conditions of the epitaxial film used in the step of determining the ratio.

SIC epitaxial wafer and method for manufacturing same

Provided is a silicon carbide epitaxial wafer, the entire surface of which is free of step bunching. Also provided is a method for manufacturing said silicon carbide epitaxial wafer. The provided method for manufacturing a silicon carbide semiconductor device includes: a step wherein a 4H&#x2014;SiC single-crystal substrate having an off-axis angle of 5&#xb0; or less is polished until the lattice disorder layer on the surface of the substrate is 3 nm or less; a step wherein, in a hydrogen atmosphere, the polished substrate is brought to a temperature between 1400&#xb0; C. and 1600&#xb0; C. and the surface of the substrate is cleaned; a step wherein silicon carbide is epitaxially grown on the surface of the cleaned substrate as the amounts of SiHgas and CHgas considered necessary for epitaxially growing silicon carbide are supplied simultaneously at a carbon-to-silicon concentration ratio between 0.7 and 1.2 to 1; and a step wherein the supply of SiHgas and the supply of CHgas are cut off simultaneously, the substrate temperature is maintained until the SiHgas and the CHgas are evacuated, and then the temperature is decreased.

Silicon carbide epitaxial wafer and manufacturing method therefor

An epitaxial SiC single crystal substrate including a SiC single crystal wafer whose main surface is a c-plane or a surface that inclines a c-plane with an angle of inclination that is more than 0 degree but less than 10 degrees, and SiC epitaxial film that is formed on the main surface of the SiC single crystal wafer, wherein the dislocation array density of threading edge dislocation arrays that are formed in the SiC epitaxial film is 10 arrays/cmor less.

Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrate

A pn-heterojunction compound semiconductor light-emitting device includes a crystalline substratea lower cladding layerformed on a surface of the crystalline substrate and composed of an n-type Group III-V compound semiconductor, a light-emitting layerformed on a surface of the lower cladding layer and composed of an n-type Group III-V compound semiconductor, an upper cladding layerformed on a surface of the light-emitting layer and composed of p-type boron phosphide, an n-type electrodeattached to the lower cladding layer and a p-type electrodeattached to the upper cladding layer. The lower and upper cladding layers are opposed to each other and sandwich the light-emitting layer to form, in cooperation with the light-emitting layer, a light-emitting portion of a pn-heterojunction structure. The light-emitting device has an intermediate layercomposed of an n-type boron-containing Group III-V compound between the light-emitting layer and the upper cladding layer.

Compound semiconductor light-emitting device having pn-junction type hetero structure and forming method thereof

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Chichibu, Japan

Michiya Odawara